JPS6258677B2 - - Google Patents
Info
- Publication number
- JPS6258677B2 JPS6258677B2 JP57041293A JP4129382A JPS6258677B2 JP S6258677 B2 JPS6258677 B2 JP S6258677B2 JP 57041293 A JP57041293 A JP 57041293A JP 4129382 A JP4129382 A JP 4129382A JP S6258677 B2 JPS6258677 B2 JP S6258677B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- barrier layer
- tunnel
- sputtering
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000004888 barrier function Effects 0.000 claims description 34
- 239000010409 thin film Substances 0.000 claims description 13
- 238000001552 radio frequency sputter deposition Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 4
- 239000007789 gas Substances 0.000 description 27
- 238000000034 method Methods 0.000 description 22
- 230000003647 oxidation Effects 0.000 description 17
- 238000007254 oxidation reaction Methods 0.000 description 17
- 239000010408 film Substances 0.000 description 15
- 239000002585 base Substances 0.000 description 14
- 239000000758 substrate Substances 0.000 description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 9
- 229910052799 carbon Inorganic materials 0.000 description 9
- 238000005530 etching Methods 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 238000000992 sputter etching Methods 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 239000002887 superconductor Substances 0.000 description 3
- 229910052797 bismuth Inorganic materials 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0912—Manufacture or treatment of Josephson-effect devices
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57041293A JPS58158981A (ja) | 1982-03-16 | 1982-03-16 | トンネル形ジヨセフソン接合素子の作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57041293A JPS58158981A (ja) | 1982-03-16 | 1982-03-16 | トンネル形ジヨセフソン接合素子の作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58158981A JPS58158981A (ja) | 1983-09-21 |
| JPS6258677B2 true JPS6258677B2 (en]) | 1987-12-07 |
Family
ID=12604399
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57041293A Granted JPS58158981A (ja) | 1982-03-16 | 1982-03-16 | トンネル形ジヨセフソン接合素子の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58158981A (en]) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02126889U (en]) * | 1989-03-29 | 1990-10-18 | ||
| JPH0535364U (ja) * | 1991-10-24 | 1993-05-14 | 益弘 光山 | フアイル |
-
1982
- 1982-03-16 JP JP57041293A patent/JPS58158981A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02126889U (en]) * | 1989-03-29 | 1990-10-18 | ||
| JPH0535364U (ja) * | 1991-10-24 | 1993-05-14 | 益弘 光山 | フアイル |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58158981A (ja) | 1983-09-21 |
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